RF2103P
2
Typical Applications
• Digital Communication Systems
• Portable Battery-Powered Equipment
• Spread-Spectrum Communication Systems • Commercial and Consumer Systems
• Driver for Higher Power Linear Applications • Base Station Equipment
MEDIUM POWER LINEAR AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2103P is a medium power linear amplifier IC. The
device is manufactured on an advanced Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final linear RF amplifier in
UHF radio transmitters operating between 450MHz and
1000MHz. It may also be used as a driver amplifier in
higher power applications. The device is self-contained
with the exception of the output matching network, power
supply feed line, and bypass capacitors, and it produces
an output power level of 750mW (CW). The device can
be used in 3 cell battery applications. The maximum CW
output at 3.6V is 175mW. The unit has a total gain of
31dB, depending upon the output matching network.
0.156
0.148
.018
.014
0.010
0.004
0.347
0.339
0.050
0.252
0.236
0.059
0.057
8° MAX
0° MIN
0.0500
0.0164
0.010
0.007
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ü
GaAs HBT
SiGe HBT
Package Style: SOIC-14
GaAs MESFET
Si CMOS
Features
• 450MHz to 1000MHz Operation
• Up to 750mW CW Output Power
• 31dB Small Signal Gain
• Single 2.7V to 7.5V Supply
• 47% Efficiency
• Digitally Controlled Power Down Mode
RF IN 1
GND 2
GND 3
PD 4
VCC1 5
VCC2 6
PRE AMP PWR 7
PRE
AMP
FPA
14 RF OUT
13 RF OUT
12 GND
11 GND
10 GND
9 RF OUT
8 RF OUT
BIAS
CIRCUITS
Ordering Information
RF2103P
RF2103P PCBA
Medium Power Linear Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B1 010720
2-1
RFMD [ RF MICRO DEVICES ]
