RF2114
2
Typical Applications
• Digital Communication Systems
• Portable Battery-Powered Equipment
• Spread-Spectrum Communication Systems • Commercial and Consumer Systems
• Driver for Higher Power Linear Applications • Base Station Equipment
MEDIUM POWER LINEAR AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2114 is a medium to high power linear amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as the final linear
RF amplifier in UHF radio transmitters operating between
1MHz and 600MHz. It may also be used as a driver
amplifier in higher power applications. The device is self-
contained with the exception of the output matching net-
work, power supply feed line, and bypass capacitors. The
device can be used in 3-cell battery applications. The
maximum CW output at 3V is 125mW. The unit has a
total gain of 35dB, depending upon the output matching
network.
0.156
0.148
.018
.014
0.010
0.004
0.347
0.339
0.050
0.252
0.236
8° MAX
0° MIN
0.059
0.057
0.0500
0.0164
0.010
0.007
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
!
GaAs HBT
SiGe HBT
Package Style: SOIC-14
GaAs MESFET
Si CMOS
Features
• 1MHz to 600MHz Operation
• Over 800mW CW Output Power
• 35dB Small Signal Gain
• Single 2.7V to 6.5V Supply
RF1 IN
GND
GND
PD
RF2 IN
RF1 OUT
VCC1
1
2
3
4
5
PA
6
7
BIAS CIRCUIT
14
13
12
11
10
9
8
RF2 OUT
RF2 OUT
GND
GND
GND
RF2 OUT
RF2 OUT
PRE AMP
• 45% Efficiency
• Digitally Controlled Power Down Mode
Ordering Information
RF2114
RF2114 PCBA
Medium Power Linear Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A5 001222
2-33
RFMD [ RF MICRO DEVICES ]
