RF2115L
2
Typical Applications
• Analog Communication Systems
• Analog Cellular Systems (AMPS & TACS)
• 900MHz Spread-Spectrum Systems
• 400MHz Industrial Radios
• Driver Stage for Higher Power Applications
• Portable Battery-Powered Equipment
HIGH POWER UHF AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2115L is a high power amplifier IC. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in analog cellu-
lar phone transmitters or ISM applications operating at
915MHz. The device is packaged in a 16-lead ceramic
quad leadless chip carrier with a backside ground. The
device is self-contained with the exception of the output
matching network and power supply feed line. A two-bit
digital control provides 4 levels of power control, in 10dB
steps.
1
.258
.242
.075
.065
.150
.050
.258
.242
7
.098
R.008
.033
.017
.050
.025
R
F2
11
Features
• 48% Efficiency
Ordering Information
RF2115L
RF2115L PCBA
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
.022
.018
.098
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ro
du
ct
ü
GaAs HBT
SiGe HBT
Package Style: QLCC-16
GaAs MESFET
Si CMOS
P
ad
ed
RF OUT
NC
15
14
13 RF OUT
12 GND
11 RF OUT
10 RF OUT
9
NC
8
G10
VCC2
NC
1
VCC3 2
VCC1 3
GND 4
PD 5
16
• Single 5V to 6.5V Supply
• Up to 1.0W CW Output Power
• 33dB Small Signal Gain
• Digitally Controlled Output Power
• Small Package Outline (0.25" x 0.25")
S
ee
U
pg
r
BIAS
CIRCUIT
GAIN CONTROL
7
G20
6
Functional Block Diagram
RF IN
High Power UHF Amplifier
Fully Assembled Evaluation Board
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B1 010329
2-39
RFMD [ RF MICRO DEVICES ]
