• Commercial and Consumer Systems
• Portable Battery Powered Equipment
RF2128P
• PCS Communication Systems
• 2.5GHz ISM Band Applications
• Wireless LANs
2
POWER AMPLIFIERS
The RF2128P is a medium-power, high-efficiency, linear
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in 2.45GHz ISM applications such as WLAN
and POS terminals. The part also will function as the final
stage in digital PCS phone transmitters requiring linear
amplification operating between 1900MHz and
2200MHz, with over 100mW transmitted power, or as the
driver stage for the RF2125 high power amplifier. A sim-
ple power down function is included for TDD operation.
The part is packaged in a low-cost plastic package with a
metal backside.
.157
.150
1
.196
.189
.050
.244
.230
8°MAX
0°MIN
.061
.055
.087
.071
.019
.014
.003
.001
EXPOSED
HEATSINK
.123
.107
.035
.016
.010
.007
Refer to “Handling of PSOP and PSSOP Products” on page 16-15
for special handling information.
Si BJT
Si Bi-CMOS
GaAs HBT
SiGe HBT
!
GaAs MESFET
Si CMOS
• Single 3.0V to 6.5V Supply
• 100mW Linear Output Power
• 28dB Small Signal Gain
• 33% Efficiency
• Digitally Controlled Power Down Mode
• 1900MHz to 2500MHz Operation
VCC2 1
GND1 2
PD 3
RF IN 4
BIAS
CIRCUITS
8 VCC1
7 RF OUT
6 RF OUT
5 GND 2
RF2128P
RF2128P PCBA
Medium Power Linear Amplifier
Fully Assembled Evaluation Board
PACKAGE BASE
GND
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 990216
2-89
RFMD [ RF MICRO DEVICES ]
