RF2132
0
RoHS Compliant & Pb-Free Product
Typical Applications
• 4.8V AMPS Cellular Handsets
• 4.8V CDMA/AMPS Handsets
• 4.8V JCDMA/TACS Handsets
Product Description
The RF2132 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in dual-mode 4-cell CDMA/AMPS handheld digi-
tal cellular equipment, spread-spectrum systems, and
other applications in the 800MHz to 950MHz band. The
device is self-contained with 50Ω input and the output
can be easily matched to obtain optimum power, effi-
ciency, and linearity characteristics over varying supply
and control voltages.
-A-
0.158
0.150
0.021
0.014
0.009
0.004
LINEAR POWER AMPLIFIER
• Driver Amplifier in Cellular Base Stations
• Portable Battery-Powered Equipment
0.392
0.386
0.069
0.064
0.050
0.244
0.230
8° MAX
0° MIN
0.010
0.008
0.060
0.054
0.035
0.016
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: Standard Batwing
Features
• Single 4.2V to 5.0V Supply
• Up to 29 dBm Linear Output Power
VCC 1
NC 2
RF IN 3
GND 4
GND 5
GND 6
GND 7
PC 8
16 GND
15 RF OUT
14 RF OUT
13 GND
12 GND
11 RF OUT
10 RF OUT
9 GND
• 29dB Gain With Analog Gain Control
• 45% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 950MHz Operation
BIAS
Ordering Information
RF2132
Linear Power Amplifier
RF2132PCBA-41X Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B10 060908
2-109
RFMD [ RF MICRO DEVICES ]
