RF2137
2
Typical Applications
• 4.8V AMPS Cellular Handsets
• 4.8V CDMA/AMPS Handsets
• 4.8V JCDMA/TACS Handsets
• Driver Amplifier in Cellular Base Stations
• Portable Battery-Powered Equipment
LINEAR POWER AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2137 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in dual-mode 4-cell CDMA/AMPS hand-held
digital cellular equipment, spread spectrum systems, and
other applications in the 800MHz to 950MHz band. The
device is self-contained with 50Ω input and the output
can be easily matched to obtain optimum power, effi-
ciency, and linearity characteristics at all recommended
supply voltages.
3.90
± 0.10
-A-
0.43
± 0.05
0.05
± 0.05
Exposed
Heat Sink
4.90
± 0.10
1.27
6.00
± 0.20
Dimensions in mm.
8° MAX
0° MIN
0.60
± 0.15
0.22
± 0.03
1.40
± 0.10
2.70
± 0.10
1.70
± 0.10
NOTES:
1. Shaded lead is pin 1.
2. Lead coplanarity - 0.10 with respect to datum "A".
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ü
GaAs HBT
SiGe HBT
Package Style: SOIC-8 Slug
GaAs MESFET
Si CMOS
Features
• Single 4.2V to 6.0V Supply
• Up to 29 dBm Linear Output Power
• 27dB Gain With Analog Gain Control
• 45% Linear Efficiency
VCC 1
RF IN 2
GND 3
PC 4
BIAS
PACKAGE BASE
GND
8 RF OUT
7 RF OUT
6 RF OUT
5 RF OUT
• On-board Power Down Mode
• 800MHz to 950MHz Operation
Ordering Information
RF2137
RF2137 PCBA
Linear Power Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B2 010720
2-115
RFMD [ RF MICRO DEVICES ]
