RF2145
2
Typical Applications
• 4.8V DCS1800/1900 Handsets
• 3V DECT Handsets and Base Stations
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
DCS1800/1900 POWER AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2145 is a high power, high efficiency amplifier IC.
The device is manufactured on an advanced Gallium Ars-
enide Heterojunction Bipolar Transistor (HBT) process,
and has been designed for use as the final RF amplifier in
a 4-cell DCS1800 or DCS1900 handset. The device is
packaged in a 16-lead plastic package with wide ground
leads, and is self-contained with the exception of the out-
put matching network and power supply feed line. Only a
single positive voltage is required to operate with full
power and efficiency, and on-board power control and
power-down functions are provided.
.158
.150
1
.009
.004
.069
.064
.020
.014
.392
.386
.050
.244
.230
8°MAX
0°MIN
.059
.054
.035
.016
.010
.008
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ü
GaAs HBT
SiGe HBT
Package Style: SOP-16 QBW1
GaAs MESFET
Si CMOS
Features
• Single 4.8V Power Supply
• +32dBm Output Power
• 28dB Small Signal Gain
• 55% Power Added Efficiency
• Power Control
• 1700MHz to 1900MHz Frequency Range
PC 1
GND 2
GND 3
VCC1 4
RF IN 5
GND 6
GND 7
NC 8
16 NC
15 GND
14 GND
13 RF OUT
12 RF OUT
11 GND
10 GND
9 NC
Ordering Information
RF2145
RF2145 PCBA
DCS1800/1900 Power Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B5 010329
2-141
RFMD [ RF MICRO DEVICES ]
