RF2152
2
Typical Applications
• 3V CDMA/AMPS Cellular Handsets
• 3V JCDMA/TACS Cellular Handsets
• 3V TDMA/AMPS Cellular Handsets
• Spread-Spectrum Systems
• CDPD Portable Data Cards
• Portable Battery-Powered Equipment
DUAL-MODE CDMA/AMPS OR TDMA/AMPS
3V POWER AMPLIFIER
2
POWER AMPLIFIERS
D
E
R
S
F
IG
21
62
N
/R
S
.157
.150
.012
.008
.003
.001
1
Product Description
The RF2152 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA/AMPS handheld digital cellular equipment,
spread-spectrum systems, and other applications in the
800MHz to 950MHz band. The device is self-contained
with 50Ω input and the output can be easily matched to
obtain optimum power, efficiency, and linearity character-
istics. The package is a PSSOP-16 with backside ground.
.197
.189
.025
.244
.228
8 °MAX
0°MIN
.030
.018
.009
.008
N
E
ro
W
d
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
uc
ts
Refer to “Handling of PSOP and PSSOP Products” on page 16-15
for special handling information.
!
GaAs HBT
SiGe HBT
Package Style: PSSOP-16
GaAs MESFET
Si CMOS
Features
• Single 3V Supply
• 28dBm Linear Output Power
• 30dB Linear Gain
• 35% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 960MHz Operation
VCC
LTUNE
NC
VCC1
N
S
O
ee
T
GND1
RF IN
VPD
VPD
U
F
pg
O
ra
R
de
d
P
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
MODE
NC
BIAS
CIRCUITS
RF OUT
RF OUT
RF OUT
NC
NC
NC
Ordering Information
RF2152
Dual-Mode CDMA/AMPS or TDMA/AMPS 3V Power
Amplifier
RF2152 PCBA-N Fully Assembled Evaluation Board 824-849MHz
RF2152 PCBA-J Fully Assembled Evaluation Board 877-924MHz
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
PACKAGE BASE
GND
Functional Block Diagram
Rev A8 001109
F2
19
2
.059
.051
.062
.070
EXPOSED
HEATSINK
.102
.110
2-155
RFMD [ RF MICRO DEVICES ]
