Preliminary
2
Typical Applications
• 3V 1850-1910 CDMA-2000 Handsets
• 3V 1920-1980 W-CDMA Handsets
• Spread Spectrum Systems
RF2161
3V W-CDMA POWER 1900MHZ
3V LINEAR POWER AMPLIFIER
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
2
POWER AMPLIFIERS
Product Description
The RF2161 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 3V
CDMA-2000 and W-CDMA handsets, spread spectrum
systems, and other applications in the 1920MHz to
1980 MHz band. The device is self-contained with 50Ω
input and the output can be easily matched to obtain opti-
mum power, efficiency, and linearity characteristics over
all recommended supply voltages.
4.20
3.95
3.50
3.35
1.50
1.20
0.38
0.40
sq.
1
3.50
3.35
4.20
3.95
2.00
1.50 sq.
0.28
0.13
0.80
ALL SOLDER PAD TOLERANCES P0.05mm
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ü
GaAs HBT
SiGe HBT
VCC2
VCC2
Package Style: MP16KO1A
GaAs MESFET
Si CMOS
Features
• Single 3V Supply
• 27dBm Linear Output Power
• 30dB Linear Gain
• 35% Linear Efficiency
• On-board Power Down Mode
VCC2
VCC
14
8
VPD2
1
GND2 2
VCC1 3
RFIN 4
5
GND1
16
15
13
12 RF OUT
11 RF OUT
10 RF OUT
6
VPD1
7
V MODE
GND
2F0
9
Ordering Information
RF2161
RF2161 PCBA
3V W-CDMA Power 1900MHZ 3V Linear Power
Amplifier
Fully Assembled Evaluation Board
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Rev A3 010514
2-197
RFMD [ RF MICRO DEVICES ]
