Preliminary
0
Typical Applications
• 3V CDMA/AMPS Cellular Handsets
• 3V J-CDMA/TACS Cellular Handsets
• 3V TDMA/AMPS Cellular Handsets
Product Description
The RF2162 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA/AMPS hand-held digital cellular equipment,
spread-spectrum systems, and other applications in the
800MHz to 960MHz band. The RF2162 has an analog
bias control voltage to maximize efficiency. The device is
self-contained with 50Ω input and the output can be eas-
ily matched to obtain optimum power, efficiency, and lin-
earity characteristics. The device is packaged in a
compact 4mmx4mm, 16-pin, leadless chip carrier.
RF2162
3V 900MHz LINEAR AMPLIFIER
• Spread-Spectrum Systems
• CDPD Portable Data Cards
• Portable Battery-Powered Equipment
0.10 C B
-B-
4.00
0.10 C B
2 PLCS
3.75
2 PLCS
2.00
0.80
TYP
2
A
1.60
2 PLCS
3.75
0.75
0.50
INDEX AREA
Dimensions in mm.
1.50
SQ.
4.00
0.10 C A
2 PLCS
0.45
0.28
3.20
2 PLCS
2.00
0.10 C A
2 PLCS
Shaded pin is lead 1.
12°
MAX
0.05
0.00
0.10 M C A B
1.00
0.90
0.75
0.65
C
0.05
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: QFN, 16-Pin, 4x4
Features
• Single 3V Supply
• 29dBm Linear Output Power
VCC BIAS
VCC1
VCC1
GND
• 29dB Linear Gain
2F0
• 35% Linear Efficiency
• On-board Power Down Mode
RF OUT
RF OUT
RF OUT
1
GND
GND
RFIN
2
3
4
5
VREG1
16
15
14
13
12
11
10
• 800MHz to 960MHz Operation
Ordering Information
RF2162
RF2162 PCBA
3V 900MHz Linear Amplifier
Fully Assembled Evaluation Board
6
VMODE
7
VREG2
8
BIAS GND
9
GND
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A19 060208
2-227
RFMD [ RF MICRO DEVICES ]
