欢迎访问ic37.com |
会员登录 免费注册
发布采购

RF2173 参数 Datasheet PDF下载

RF2173图片预览
型号: RF2173
PDF下载: 下载PDF文件 查看货源
内容描述: 3V GSM功率放大器 [3V GSM POWER AMPLIFIER]
分类和应用: 放大器功率放大器GSM
文件页数/大小: 10 页 / 140 K
品牌: RFMD [ RF MICRO DEVICES ]
 浏览型号RF2173的Datasheet PDF文件第2页浏览型号RF2173的Datasheet PDF文件第3页浏览型号RF2173的Datasheet PDF文件第4页浏览型号RF2173的Datasheet PDF文件第5页浏览型号RF2173的Datasheet PDF文件第6页浏览型号RF2173的Datasheet PDF文件第7页浏览型号RF2173的Datasheet PDF文件第8页浏览型号RF2173的Datasheet PDF文件第9页  
RF2173
2
Typical Applications
• 3V GSM Cellular Handsets
• 3V Dual-Band/Triple-Band Handsets
• GPRS Compatible
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
3V GSM POWER AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2173 is a high power, high efficiency power ampli-
fier module offering high performance in GSM or GPRS
applications. The device is manufactured on an advanced
GaAs HBT process, and has been designed for use as
the final RF amplifier in GSM hand-held digital cellular
equipment and other applications in the 800MHz to
950MHz band. On-board power control provides over
70dB of control range with an analog voltage input, and
provides power down with a logic "low" for standby opera-
tion. The device is self-contained with 50Ω input and the
output can be easily matched to obtain optimum power
and efficiency characteristics. The RF2173 can be used
together with the RF2174 for dual-band operation. The
device is packaged in an ultra-small plastic package, min-
imizing the required board space.
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
2
3.75
0.75
0.50
0.45
0.28
0.80
TYP
1
1
3.75
+
1.60 4.00
12°
1.50 SQ
INDEX AREA 3
3.20
4.00
1.00
0.90
0.75
0.65
NOTES:
1 Shaded Pin is Lead 1.
2
Dimension applies to plated terminal and is measured between
0.10 mm and 0.25 mm from terminal tip.
0.05
0.00
Dimensions in mm.
The terminal #1 identifier and terminal numbering convention
3 shall conform to JESD 95-1 SPP-012. Details of terminal #1
identifier are optional, but must be located within the zone
indicated. The identifier may be either a mold or marked
feature.
4
5
Pins 1 and 9 are fused.
Package Warpage: 0.05 max.
ü
GaAs HBT
SiGe HBT
VCC2
VCC2
Package Style: LCC, 16-Pin, 4x4
GaAs MESFET
Si CMOS
Features
• Single 2.7V to 4.8V Supply Voltage
• +36dBm Output Power at 3.5V
• 32dB Gain with Analog Gain Control
• 56% Efficiency
GND
1
GND2
RF IN
GND1
2
3
4
5
VCC1
16
15
14
13
12
11
10
RF OUT
2F0
NC
• 800MHz to 950MHz Operation
RF OUT
RF OUT
• Supports GSM and E-GSM
6
APC1
7
APC2
8
VCC
9
GND
Ordering Information
RF2173
RF2173 PCBA
3V GSM Power Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 010914
2-221