RF2306
4
Typical Applications
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Portable Battery Powered Equipment
• Broadband Test Equipment
GENERAL PURPOSE AMPLIFIER
Product Description
The RF2306 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 2000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified.
.156
.152
.017
1
.195
.191
.050
.240
.232
.056
.052
.004
MIN
4
GENERAL PURPOSE
AMPLIFIERS
5°
.022
.018
.008
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ü
GaAs HBT
SiGe HBT
Package Style: SOP-8
GaAs MESFET
Si CMOS
Features
• DC to 2000MHz Operation
• Internally matched Input and Output
• 20dB Small Signal Gain
• 3.5dB Noise Figure
• 10mW Linear Output Power
• Single Positive Power Supply
RF IN 1
GND 2
GND 3
GND 4
8 RF OUT
7 GND
6 GND
5 GND
Ordering Information
RF2306
RF2306 PCBA
General Purpose Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B2 000228
4-63
RFMD [ RF MICRO DEVICES ]
