Preliminary
RF2363
DUAL-BAND 3V LOW NOISE AMPLIFIER
4
Typical Applications
• GSM/DCS Dual-Band Handsets
• Cellular/PCS Dual-Band Handsets
• General Purpose Amplification
• Commercial and Consumer Systems
Product Description
The RF2363 is a dual-band Low Noise Amplifier
designed for use as a front-end for 950MHz GSM/
1850MHz DCS applications and may be used for dual-
band cellular/PCS applications. The 900MHz LNA is a
single-stage amplifier; the 1900MHz LNA is a 2-stage
amplifier. The part may also be tuned for applications in
other frequency bands. The device has an excellent com-
bination of low noise figure and high linearity at a very low
supply current. It is packaged in a very small industry
standard SOT 8-lead plastic package.
1.59
1.61
0.365
0.15
0.05
4
GENERAL PURPOSE
AMPLIFIERS
0.127
TEXT*
2.80
3.00
0.650
2.60
3.00
3°MAX
0°MIN
1.44
1.04
*When Pin 1 is in upper
left, text reads downward
(as shown).
0.35
0.55
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ü
GaAs HBT
SiGe HBT
Package Style: SOT, 8-Lead
GaAs MESFET
Si CMOS
Features
• Low Noise and High Intercept Point
• 18dB Gain at 900MHz
• 21dB Gain at 1900MHz
RF OUT1
GND
RF OUT2
EN1
1
2
3
4
8
7
6
5
RF IN1
GND
RF IN2
EN2
• Low Supply Current
• Single 2.5V to 5.0V Power Supply
• Very Small SOT-23-8 Plastic Package
Ordering Information
RF2363
RF2363 PCBA
Dual-Band 3V Low Noise Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B2 010129
4-199
RFMD [ RF MICRO DEVICES ]
