Preliminary
4
Typical Applications
• GSM/DCS Dual-Band Handsets
• Cellular/PCS Dual-Band Handsets
RF2416
DUAL-BAND 2.7V LOW NOISE AMPLIFIER
• General Purpose Amplification
• Commercial and Consumer Systems
Product Description
The RF2416 is a dual-band low noise amplifier with
bypass switch designed for use as a front-end for
950MHz GSM and DCS1800/PCS1900 applications. It
may also be used for dual-band cellular/PCS application.
The 900MHz LNA is a single-stage amplifier with bypass
switch; the 1800/1900 LNA is a two-stage amplifier with
bypass switch. Both amplifiers have excellent noise figure
and high linearity in both high gain and bypass/low gain
mode. The device is packaged in a 3mmx3mm, 12 pin,
leadless chip carrier.
0.80
0.65
1.00
0.85
0.60
0.24 typ
4 PLCS
2
0.30
0.18
1.25
sq.
0.95
12°
max
0.05
0.01
0.75
0.50
0.50
0.23
0.13
4 PLCS
Dimensions in mm.
NOTES:
1 Shaded Pin is Lead 1.
2 Dimension applies to plated terminal and is measured between 0.02 mm and
0.25 mm from terminal end.
Pin 1 identifier must exist on top surface of package by identification mark or
3
feature on the package body. Exact shape and size is optional.
4 Package Warpage: 0.05 mm max.
5 Die thickness allowable: 0.305 mm max.
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ü
GaAs HBT
SiGe HBT
HB GND1
VCC1 HB
Package Style: LCC, 12-Pin, 3x3
GaAs MESFET
Si CMOS
Features
• Low Noise and High Intercept Point
• Dual-Band Application GSM900 and
DCS1800/PCS1900
• Power Down Control
• Switchable Gain
12
HB IN 1
11
10
9 HB OUT
HB BIAS 2
Logic
Control
HB GND2
8 HB SELECT
LB BIAS 3
4
LB IN
5
LB GND
6
LB OUT
7 LB SELECT
Ordering Information
RF2416
RF2416 PCBA
Dual-Band 2.7V Low Noise Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A2 010810
4-199
GENERAL PURPOSE
AMPLIFIERS
3.00
sq.
4
0.65
0.30
RFMD [ RF MICRO DEVICES ]
