RF2480
Parameter
RF Output (~900MHz)
Maximum Output Power
High-Linearity Output Power
Carrier Suppression
0
50
+4
-11
dBm
dBm
dB
Specification
Min.
Typ.
Max.
Unit
Condition
LO=880MHz, -5dBm; SSB
I&Q Amplitude=2V
PP
I&Q Amplitude=0.325V
PP
T=25°C; P
OUT
=-11dBm (meets CDMA base
station requirements); optimized I,Q DC off-
sets
Over Temperature (Temperature cycled from
-40°C to +85°C after optimization at
T=25°C; P
OUT
=-11dBm)
T=25°C; P
OUT
=-11dBm; optimized I,Q DC
offsets
Over Temperature (Temperature cycled from
-40°C to +85°C after optimization at
T=25°C; P
OUT
=-11dBm)
At 20MHz offset, V
CC
=5V; Tied to V
REF
:
ISIG, QSIG, IREF, and QREF.
LO=2000MHz, -5dBm; SSB
I&Q Amplitude=2V
PP
I&Q Amplitude=0.325V
PP
T=25°C; P
OUT
=-17dBm; optimized I,Q DC
offsets
Temperature cycled from -40°C to +85°C
after optimization at T=25°C; P
OUT
=-17dBm
T=25°C; P
OUT
=-17dBm; optimized I,Q DC
offsets
Temperature cycled from -40°C to +85°C
after optimization at T=25°C; P
OUT
=-17dBm
At 20MHz offset, V
CC
=5V; Tied to V
REF
:
ISIG, QSIG, IREF, and QREF.
35
dB
Sideband Suppression
50
35
dB
dB
RF Output (~2000MHz)
Maximum Output Power
High-Linearity Output Power
Carrier Suppression
-7
50
35
Sideband Suppression
50
40
Output Impedance
Broadband Noise Floor
58-j11
-158.0
-3
-17
dBm
dBm
dB
dB
dB
dB
Ω
dBm/Hz
Power Down
Turn On/Off Time
PD Input Resistance
Power Control “ON”
Power Control “OFF”
100
50
2.8
1.0
1.2
5
4.5
Current
50
25
6.0
ns
kΩ
V
V
V
V
mA
µA
Threshold voltage
Threshold voltage
Specifications
Operating Limits
Operating
Power Down
Power Supply
Voltage
Rev A3 011019
5-31
MODULATORS AND
UPCONVERTERS
Output Impedance
Broadband Noise Floor
13-j:25
-153.0
Ω
dBm/Hz
5
RFMD [ RF MICRO DEVICES ]
