RF3100-2
2
Typical Applications
• 3V CDMA/AMPS Cellular Handsets
• 3V CDMA2000/1X Cellular Handsets
• Spread-Spectrum Systems
• Designed for Compatibility with Qualcomm
Chipsets
3V 900MHZ LINEAR AMPLIFIER MODULE
2
POWER AMPLIFIERS
4.390
6.0 sq
0.100
Dimensions in mm.
Product Description
The RF3100-2 is a high-power, high-efficiency linear
amplifier module targeting 3V hand-held systems. The
device is manufactured on an advanced Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in dual-
mode 3V CDMA/AMPS hand-held digital cellular equip-
ment, spread-spectrum systems, and other applications
in the 824MHz to 849MHz band. The RF3100-2 has a
digital control line for low power application to reduce the
current drain. The device is self-contained with 50Ω input
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. The module is an
ultra-small 6mmx6mm land grid array with backside
ground.
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
3.000
0.100
0.800 sq
typ
1.700
2.500
NOTE:
Nominal thickness, 1.55 mm.
0.600
ü
GaAs HBT
SiGe HBT
Package Style: LGM (6mmx6mm)
GaAs MESFET
Si CMOS
Features
• Input/Output Internally Matched@50
Ω
• Single 3V Supply
• 28dBm Linear Output Power
• 29dB Linear Gain
VCC1
1
7
GND
RF IN
2
6
RF OUT
• 45mA Idle Current
VREG
3
4
VMODE
5
VCC2
Ordering Information
RF3100-2
3V 900MHz Linear Amplifier Module
RF3100-2 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A3 011017
2-269
RFMD [ RF MICRO DEVICES ]
