Preliminary
RF3117
3V 900MHZ LINEAR AMPLIFIER MODULE
2
Typical Applications
• 3V CDMA/AMPS Cellular Handsets
• 3V CDMA2000/1X Cellular Handsets
• Compatible with Qualcomm Chipset
• Spread-Spectrum Systems
2
POWER AMPLIFIERS
4.390
6.0 sq
0.100
Dimensions in mm.
Product Description
The RF3117 is a high-power, high-efficiency linear ampli-
fier module targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA/AMPS handheld digital cellular equipment,
spread-spectrum systems, and other applications in the
824MHz to 849MHz band. The RF3117 has a digital con-
trol line for low power application to reduce the current
drain. The device is self-contained with 50Ω input and
output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. The module is an
ultra-small 6mmx6mm land grid array with backside
ground.
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
3.000
0.100
0.800 sq
typ
1.700
2.500
NOTE:
Nominal thickness, 1.55 mm.
0.600
ü
GaAs HBT
SiGe HBT
Package Style: LGM (6mmx6mm)
GaAs MESFET
Si CMOS
Features
• Input/Output Internally Matched@50
Ω
• Single 3V Supply
• 30dBm Linear Output Power
• 30dB Linear Gain
VCC1
1
7
GND
RF IN
2
6
RF OUT
• 33% Linear Efficiency
• 55mA Idle Current
VREG
3
4
VMODE
5
VCC2
Ordering Information
RF3117
RF3117 PCBA
3V 900MHz Linear Amplifier Module
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A0 011016
2-269
RFMD [ RF MICRO DEVICES ]
