RF3220High
Linear-
ity/Driver
Amplifier
RF3220
HIGH LINEARITY/DRIVER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: QFN, 12-Pin, 3 x 3
GND
500MHz to 2GHz
+40.8dBm Output IP3
+14.2dB Gain at 1850MHz
+12.4dBm Input P1dB at
1850MHz
2.8dB Noise Figure at 1850MHz
Single 5V Power Supply
GND 1
RF IN 2
GND 3
12
11
GND
10
9 GND
8 RF OUT
7 GND
6
GND
Features
4
GND
Basestation Applications
Cellular and PCS Systems
CDMA, W-CDMA Systems
GSM/EDGE Systems
Final PA for Low-Power Applica-
tions
Functional Block Diagram
Product Description
The RF3220 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT)
amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for
use in applications requiring high-linearity and low noise figure over the 500MHz to
3GHz frequency range. The RF3220 operates from a single 5V power supply, and is
assembled in an economical 3mmx3mm QFN package.
Ordering Information
RF3220
RF3220PCBA-41X
High Linearity/Driver Amplifier
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A1 DS050822
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
GND
Applications
BIAS
5
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