RF3300-2
0
Typical Applications
• 3V CDMA/AMPS Cellular Handsets
• 3V CDMA2000/1X Cellular Handsets
• Spread-Spectrum Systems
Product Description
The RF3300-2 is a high-power, high-efficiency linear
amplifier module targeting 3V handheld systems. The
device is manufactured on an advanced Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in dual-
mode 3V CDMA/AMPS handheld digital cellular equip-
ment, spread-spectrum systems, and other applications
in the 824MHz to 849MHz band. The RF3300-2 has a
digital control line for low power application to reduce the
current drain. The device is self-contained with 50Ω input
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. The RF3300-2 con-
tains a temperature compensating bias circuit to improve
performance over temperature.
7.375 TYP
6.775
6.575 TYP
5.875 TYP
3V 900MHz LINEAR AMPLIFIER MODULE
• Designed for Compatibility with Qualcomm
Chipsets
1.625
2.425
3.575
4.375
1
5.075 TYP
4.375 TYP
NOTES:
Nominal thickness, 1.55
mm.
Note orientation of Pin 1.
3.575 TYP
2.875 TYP
2.075 TYP
0.925 TYP
0.125 TYP
0.000
0.125 TYP
0.925 TYP
5.075 TYP
5.875 TYP
0.000
1.750
4.250
Dimensions in mm.
Bottom View
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: Module (6mmx7.5mm)
Features
• Single 3V Supply with Internal V
REF
• Integrated Power Detect Circuit
• 27dB Linear Gain
• 55mA Idle Current
VMODE
PA_ON
VCC3 1
12
11
Pwr
Det
Bias
10 PDET_OUT
• Temperature Compensating Bias Circuit
• Integrated PA Enable Switch
GND 2
9 GND
GND 3
8 GND
Ordering Information
RF IN 4
7 RF OUT
RF3300-2
3V 900MHz Linear Amplifier Module
RF3300-2 PCBA Fully Assembled Evaluation Board
VCC1 5
6 VCC2
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A6 030124
2-539
RFMD [ RF MICRO DEVICES ]
