RF3315
0
Pb-Free Product
Typical Applications
• Basestation Applications
• Cellular and PCS Systems
• WLL, W-CDMA Systems
• Final PA for Low-Power Applications
BROADBAND HIGH LINEARITY AMPLIFIER
Product Description
The RF3315 is a high-efficiency GaAs Heterojunction
Bipolar Transistor (HBT) amplifier packaged in a low-cost
surface-mount package. This amplifier is ideal for use in
applications requiring high-linearity and low noise figure
over the 300MHz to 3GHz frequency range. The RF3315
operates from a single 5V power supply.
1.04
0.80
0.50
0.30
1.60
1.40
3.10
2.90
0.48
0.36
2 PL
4.60
4.40
2.60
2.40
Shaded lead is pin 1.
Dimensions in mm.
1.80
1.45
1.75
1.40
0.43
0.38
0.53
0.41
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: SOT89
Features
• 300MHz to 3GHz
• +40dBm Output IP3
• 12.5dB Gain at 2.0GHz
GND
• +23dBm P1dB
• 3.0dB Typical Noise Figure at 2.0GHz
• Single 5V Power Supply
4
1
RF IN
2
GND
3
RF OUT
Ordering Information
RF3315
Broadband High Linearity Amplifier
RF3315PCBA-410 Fully Assembled Evaluation Board (2GHz)
RF3315PCBA-411 Fully Assembled Evaluation Board (900MHz)
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A9 050310
4-557
RFMD [ RF MICRO DEVICES ]
