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RF3807PCK-410 参数 Datasheet PDF下载

RF3807PCK-410图片预览
型号: RF3807PCK-410
PDF下载: 下载PDF文件 查看货源
内容描述: 砷化镓HBT预驱动放大器 [GaAs HBT PRE-DRIVER AMPLIFIER]
分类和应用: 放大器驱动
文件页数/大小: 20 页 / 782 K
品牌: RFMD [ RF MICRO DEVICES ]
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RF3807GaAs
HBT Pre-Driver
Amplifier
RF3807
GaAs HBT PRE-DRIVER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: SOIC-8
Features
Output Power>0.5W P1dB
High Linearity
High Power-Added Efficiency
Thermally-Enhanced Packaging
Broadband Platform Design
Approach, 450MHz to 2700MHz
RFIN
NC
VREF
1
2
3
4
Bias
Circuit
8
VBIAS
7
RFOUT/VCC
6
RFOUT/VCC
5
NC
Applications
GaAs Pre-Driver for Basestation
Amplifiers
PA Stage for Commercial Wire-
less Infrastructure
Class AB Operation for NMT,
GSM, DCS, PCS, UMTS, and
WLAN Transceiver Applications
2nd/3rd Stage LNA for Wireless
Infrastructure
NC
PACKAGE BASE
GND
Functional Block Diagram
Product Description
The RF3807 is a GaAs pre-driver power amplifier, specifically designed for wireless
infrastructure applications. Using a highly reliable GaAs HBT fabrication process,
this high-performance single-stage amplifier achieves high output power over a
broad frequency range. The RF3807 also provides excellent efficiency and thermal
stability through the use of a thermally-enhanced surface-mount plastic-slug pack-
age. Ease of integration is accomplished through the incorporation of an optimized
evaluation board design provided to achieve proper 50Ω operation. Various evalua-
tion boards are available to address a broad range of wireless infrastructure appli-
cations: NMT 450MHz, GSM850, GSM900, DCS1800, PCS1900, and UMTS2100.
Ordering Information
RF3807
RF3807PCK-410
RF3807PCK-411
RF3807PCK-412
RF3807PCK-413
RF3807PCK-414
RF3807PCK-415
GaAs HBT Pre-Driver Amplifier
Fully Assembled Evaluation Board, 450MHz
Fully Assembled Evaluation Board, 869MHz to 894MHz
Fully Assembled Evaluation Board, 920MHz to 960MHz
Fully Assembled Evaluation Board, 1800MHz to 1880MHz
Fully Assembled Evaluation Board, 1930MHz to 1990MHz
Fully Assembled Evaluation Board, UMTS
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A5 DS080220
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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