RF5184
0
Typical Applications
• 3V W-CDMA Cellular Handset (Band 5)
• 3V W-CDMA US-PCS Handset (Band 2)
DUAL-BAND 800MHz/1900MHz
W-CDMA POWER AMPLIFIER MODULE
Product Description
4.0
-A-
-B-
The RF5184 is a high-power, high-efficiency linear ampli-
fier module specifically designed for 3V handheld sys-
tems. The device is manufactured on an advanced third
generation GaAs HBT process, and was designed for use
as the final RF amplifier in W-CDMA handheld digital cel-
lular equipment, spread-spectrum systems, and other
applications in the 824MHz to 849MHz band (Band 5)
and 1850MHz to 1910MHz band (Band 2). The RF5184
has a digital control line for low power applications to
lower quiescent current. The RF5184 is assembled in a
24-pin, 4mmx4mm, QFN package.
1.00
0.80
0.10 C
4.0
0.10 C B
2 PL
0.10 C A
2 PL
0.2 C
Shaded area indicates pin 1.
Dimensions in mm.
-C-
0.50 TYP
0.10 C A B
0.55
TYP
0.35
SEATING
PLANE
Scale: None
0.10 C
2.60
2 PL
2.40
0.05
TYP
0.00
0.203
TYP
0.08 C
0.30
TYP
0.18
0.10 M C A B
TYP
0.08
0.03
0.50
TYP
0.30
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
VMODE -
PCS
Package Style: QFN, 24-Pin, 4x4
GaAs HBT
SiGe HBT
GaN HEMT
VCC1 -
PCS
VCC2 -
PCS
VCC2 -
PCS
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Features
• Input/Output Internally Matched@50Ω
• 43% Peak Linear Efficiency for Cell Band
• -41dBc ACLR @ 5MHz for Cell Band
24
VREG - PCS 1
RF IN - PCS 2
VREG - CELL 3
VMODE - CELL 4
RF IN - CELL 5
VCC1 - CELL 6
7
NC
VCC
BIAS
23
22
21
20
VCC2 -
PCS
19
18 NC
17 NC
16 RF OUT - PCS
• -40dBc ACLR@5MHz for PCS Band
• 44% Peak Linear Efficiency for PCS Band
• HSDPA Capable
Bias
PCS
Bias
Cell
15 NC
14 RF OUT - CELL
13 NC
Ordering Information
RF5184
Dual-Band 800MHz/1900MHz W-CDMA Power
Amplifier Module
RF5184PCBA-410 Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
8
NC
9
VCC2 -
CELL
10
VCC2 -
CELL
11
VCC2 -
CELL
12
NC
Functional Block Diagram
Rev A0 060323
2-689
RFMD [ RF MICRO DEVICES ]
