Absolute Maximum Ratings
Parameter
Supply Voltage (V
CC
and V
BIAS
)
Reference Current (I
REF
)
DC Supply Current (I
C
)
CW Input Power, 2:1 Output VSWR
Output Load VSWR at P3dB
Operating Junction Temperature
Operating Temperature Range (T
L
)
Storage Temperature
ESD Rating: Human Body Model
Moisture Sensitvity Level
Rating
6.5
5
256
23
5:1
160
-40 to +85
-55 to +150
Class 1B
MSL 2
Unit
V
mA
mA
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Notes: 1. The maximum ratings must all be met simultaneously.
2. Pdiss = P
DC
+P
RFIN
-P
RFOUT
3. T
J
=T
L
+Pdiss*Rth
Parameter
860MHz to 960MHz
Frequency
Input Power (P
IN
)
Gain (S21)
OIP3
P1dB
Efficiency at P3dB
Input Return Loss (S11)
Output Return Loss (S22)
Noise Figure
WCDMA Ch Power at -65dBc ACPR
WCDMA Ch Power at -55dBc ACPR
Min.
860
Specification
Typ.
Max.
960
15
Unit
Condition
V
CC
=5.0V, V
BIAS
=5.0V, I
CQ
=90mA
MHz
dBm
dB
dBm
dBm
%
dB
dB
dB
dBm
dBm
Tuned for 880MHz useful to 960MHz
V
CC
<6.0V, max recommended
12dBm/tone, tone spacing=1MHz
At P3dB
869MHz to 894MHz band
869MHz to 894MHz band
3GPP 3.5, Test Model 1, 64 DPCH
3GPP 3.5, Test Model 1, 64 DPCH
V
CC
=5.0V, V
BIAS
=5.0V, I
CQ
=90mA
15.8
43
25
58
18
11
3.5
12.9
14.6
2110
2140
13.7
42
24
56
15
13.5
2.9
11.5
13.2
80
90
5.0
95
20
115
6.0
2170
15
UMTS2100
Frequency
Input Power (P
IN
)
Gain (S21)
OIP3
P1dB
Efficiency at P3dB
Input Return Loss (S11)
Output Return Loss (S22)
Noise Figure
WCDMA Ch Power at -65dBc ACPR
WCDMA Ch Power at -55dBc ACPR
MHz
dBm
dB
dBm
dBm
%
dB
dB
dB
dBm
dBm
mA
V
C/W
A
V
CC
<6.0V, max recommended
12dBm/tone, tone spacing=1MHz
At P3dB
3GPP 3.5, Test Model 1, 64 DPCH
3GPP 3.5, Test Model 1, 64 DPCH
At V
CC
=5.0V
Max recommended collector voltage
At quiescent current, no RF
At V
REF
=0V
Power Supply
Operating Current (Quiescent)
Operating Voltage (V
CC
)
Thermal Resistance (R
TH
)
Power Down Current
2 of 10
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