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SBB-3089Z 参数 Datasheet PDF下载

SBB-3089Z图片预览
型号: SBB-3089Z
PDF下载: 下载PDF文件 查看货源
内容描述: 50MHz至6000MHz的InGaP HBT有源偏置增益模块 [50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK]
分类和应用:
文件页数/大小: 6 页 / 252 K
品牌: RFMD [ RF MICRO DEVICES ]
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SBB-3089Z
50MHz to
6000MHz
InGaP HBT
Active Bias
Gain Block
Preliminary
SBB-3089Z
50MHz to 6000MHz InGaP HBT ACTIVE BIAS
GAIN BLOCK
RoHS Compliant and Pb-Free Product
Package: SOT-89
Product Description
RFMD’s SBB-3089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. The SBB-3089Z product is designed for high linearity 5V gain
block applications that require excellent gain flatness, small size, and min-
imal external components. It is internally matched to 50Ω.
Gain and Return Loss
V
S
= 5V, I
S
= 42mA
Features
Single Fixed 5V Supply
Patented Self Bias Circuit and
Thermal Design
Gain=16.4dBm at 1950MHz
P
1dB
=15.2dBm at 1950MHz
OIP
3
=29.5dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
MSL 1 Moisture Rating
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
dB
30.0
20.0
S21
10.0
Bias Tee Data, Z
S
= Z
L
= 50
0.0
, T
L
= 25°C
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Wideband Instrumentation
4.0
5.0
6.0
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
-10.0
S11
-20.0
S22
-30.0
0.0
1.0
2.0
3.0
Frequency (GHz)
Parameter
Small Signal Gain
Min.
Specification
Typ.
16.6
16.4
16.3
15.6
15.2
15.4
30.0
29.5
29.5
21.0
25.5
3.9
4.2
42.0
Max.
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
V
mA
mA
°C/W
Condition
850MHz
1950MHz
2400MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
2400MHz
1950MHz
1950MHz
1950MHz
R
DC
=20Ω, V
S
=5.0V
R
DC
=20Ω, V
S
=5.0V
Per user preference via R
DC
Junction to lead
Output Power at 1dB Compression
Output Third Order Intercept Point
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
4.3
Device Operating Current
Operational Current Range
30
46
Thermal Resistance
80
Test Conditions: V
D
=4.2V I
D
=42mA T
L
=25°C OIP
3
Tone Spacing=1MHz
R
DC
=20Ω Bias Tee Data Z
S
=Z
L
=50Ω P
OUT
per tone=-5dBm
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-105803 Rev C
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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