SPF-5043Z
50MHz to
4000MHz,
GaAs pHEMT
Low Noise
MMIC Ampli-
fier
Preliminary
SPF-5043Z
50MHz to 4000MHz, GaAs pHEMT LOW NOISE
MMIC AMPLIFIER
RoHS Compliant and Pb-Free Product
Product Description
The SPF-5043Z is a high performance pHEMT MMIC LNA designed for
operation from 50MHz to 4000MHz. The on-chip active bias network pro-
vides stable current over temperature and process threshold voltage vari-
ations. The SPF-5043Z offers ultra-low noise figure and high linearity
performance in a gain block configuration. Its single-supply operation and
integrated matching networks make implementation remarkably simple. A
high maximum input power specification make it ideal for high dynamic
range receivers.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Gain (dB)
2 4 .0
2 1 .0
1 8 .0
1 5 .0
1 2 .0
9 .0
6 .0
3 .0
0 .0
0 .0
0 .5
1 .0
1 .5
2 .0
2 .5
3 .0
3 .5
4 .0
Features
Ultra-Low Noise
Figure=0.8dB @ 900MHz
Gain=18.2dB @ 900MHz
High Linearity: OIP3=35dBm
@ 1900MHz
P
1dB
=21dBm @ 1900MHz
Single-Supply Operation:
5V @ I
DQ
=46mA
Flexible Biasing Options: 3V
to 5V, Adjustable Current
Broadband Internal Matching
NF (dB)
G a in & N F ve rsu s F re q u e n c y
B ro a d b a n d A p p lic a tio n C irc u it (5 V , 4 6 m A )
4 .0
3 .5
3 .0
2 .5
2 .0
1 .5
1 .0
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Applications
Cellular, PCS, W-CDMA, ISM,
WiMAX Receivers
Low Noise, High Linearity
Gain Block Applications
G a in
NF
0 .5
0 .0
F re q u e n cy (M H z)
Parameter
Small Signal Power Gain
Min.
Specification
Typ.
Max.
Unit
dB
dB
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
V
mA
°C/W
0.9GHz
1.96GHz
0.9GHz
1.9GHz
0.9GHz
1.9GHz
0.9GHz
1.9GHz
0.9GHz
1.9GHz
0.9GHz
1.9GHz
0.9GHz
1.9GHz
Condition
18.2
12.9
Output Power at 1dB Compression
20.0
21.0
Output Third Order Intercept Point
33.0
35.0
Noise Figure
0.80
0.80
Input Return Loss
-16.0
-17.5
Output Return Loss
-17.5
-16.5
Reverse Isolation
-23.5
-19.0
Device Operating Voltage
5.00
5.25
Device Operating Current (Quiescent)
46
Thermal Resistance (junction to lead)
125
Test Conditions: V
D
=5V, I
DQ
=46mA, OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm
Z
S
=Z
L
=50Ω, 25°C, Broadband Application Circuit
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-105475 Rev D
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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