01/99
B-9
2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers
¥ Ultra-High Input Impedance
Amplifiers
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating (to 175°C)
– 40 V
50 mA
300 mW
2 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
2N4117, 2N4118, 2N4119
2N4117A, 2N4118A, 2N4119A
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
2N4117, 2N4118, 2N4119
2N4117A, 2N4118A, 2N4119A
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
g
fs
g
os
C
iss
C
rss
V
(BR)GSS
I
GSS
V
GS(OFF)
I
GSS
2N4117
2N4117A
Min
– 40
– 10
–1
– 0.6
0.03
0.015
– 1.8
0.09
0.09
Max
2N4118
2N4118A
Min
– 40
– 10
–1
–1
0.08
0.08
–3
0.24
0.24
Max
2N4119
2N4119A
Min
– 40
– 10
–1
–2
0.2
0.2
–6
0.6
0.6
Max
Unit
V
pA
pA
V
mA
mA
Process NJ01
Test Conditions
I
G
= – 1µA, V
DS
= ØV
V
GS
= – 20V, V
DS
= ØV
V
GS
= – 20V, V
DS
= ØV
V
DS
= 10V, I
D
= 1 nA
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
70
210
3
3
1.5
80
250
5
3
1.5
100
330
10
3
1.5
µS
µS
pF
pF
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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