Precision Resistor Type PBH
Spec Sheet R371-1/2 July 97
Technical Data
Resistance range
Tolerances
Temperature coefficient ( R > 20 mOhm )
Applicable temperature range
Load capacity
Thermal resistance to aluminum base plate
Thermal resistance to ambiente
Dielectric withstanding voltage
Inductance ( R = 100 mOhm )
Stability ( nominal load at 70 °C )
Remarks:
2 mOhm - 100 Ohm
1 %, 5 %
< 50 ppm/K ( 20 °C to 60 °C )
-55 °C to +125 °C
3 W / 10 W with heatsink provided
Rth < 4 K/W
Rth < 20 K/W
500 V AC
< 20 nH
deviation < 0.5 % after 2,000 h
- Standard resistance values according to E12 with the additionel values of 2 and 5
- Minimum quantity of other values on request
- Tolerance 0.5% for values of 10 mOhm up
The Resistor type
PBH,
which is very similar to type
TO 247 for high power transistors, features small
dimensions complemented with high load capacity and
compatibility with active components.
The use of the precision resistance material
MANGANIN
as well as optimization of conductor leads and resistance
structure result in a low temperature coefficient, a long-
term stability and low inductance.
The resistor is mounted through a center bore to the
heatsink, whereby the large area of the base plate will
function as an optimum heat transfer.The thermal resistance
between resistor layer and aluminum base plate is rated
below 4 K/W, so that the temperature of the resistor foil
P / P
Nenn
1
0.75
0.5
0.25
will rise only little at a nominal load of 10 W, compared with
customary resistors. This again results that the absolute
resistance deviation caused by the temperature coefficient,
is very low under load and will serve for a good stability on
overloading.
The resistor is ideally suited for applications in power
electronic and control technique, as most applications at
inductive loading will require operation with switched power
regulating units.
Short connection distances and small dimensions with
high loading capacity and low inductance are a prerequisite
for obtaining high switching frequencies.
∆R/R
20
[%]
0.2
-40
-20
20
40
60
80
100
120
T [
o
C]
-0.2
-0.4
0
20
40
60
80
100
120
T
G
/ [
o
C]
Temperature dependence of the electrical resistance
of ISA-PLAN Resistors
power derating curve
dR/R [%]
2
5 mΩ
10 mΩ
1
-40
-20
20
-1
-2
40
20 mΩ
60
80
100
100 mΩ
>200 mΩ
T
120
[
o
C]
dimensions
( mm )
Change of the R(T)-curve to the TCR of copper terminals
for very low ohmic 2-terminal-resistors
RHOPOINT [ RHOPOINT COMPONENTS ]
