RT6575C/D
Parameter
Symbol
ILDO5
Test Conditions
Min
100
100
--
Typ
175
175
4.66
Max Unit
V
LDO5 = 4.5V, VBYP1 = GND,
LDO5 Output Current
LDO3 Output Current
--
--
--
mA
mA
V
VIN = 7.4V
ILDO3
VLDO3 = 3V, V = 7.4V
IN
LDO5 Switch-over
Threshold to BYP1
VSWTH
Rising Edge at BYP1 Regulation Point
LDO5 to BYP1, 10mA
LDO5 Switch-over
Equivalent Resistance
RSW
--
1.5
3
VCLK Output
VCLK On-Resistance
RVCLK
fVCLK
Pull-up and Pull-down Resistance
--
--
10
--
--
VCLK Switching
Frequency
260
kHz
UVLO
Rising Edge
Falling Edge
Channel x Off
--
3.7
--
4.3
3.9
2.5
4.6
4.1
--
LDO5 UVLO Threshold
VUVLO5
VUVLO3
V
V
LDO3 UVLO Threshold
Power Good Indicator
PGOOD Detect, VFBx Rising Edge
Hysteresis
84
--
88
8
92
--
PGOOD Threshold
VPGxTH
%
PGOOD Leakage Current
High state, VPGOOD = 5.5V
--
--
1
A
PGOOD Output Low
Voltage
ISINK = 4mA
--
--
0.3
V
Fault Detection
OVP Trip Threshold
OVP Propagation Delay
UVP Trip Threshold
VOVP
FBx with Respect to Internal Reference 109
--
113
1
117
--
%
s
%
VUVP
UVP Detect, FBx Falling Edge
47
--
52
57
UVP Shutdown Blanking
Time
tSHDN_UVP From ENx Enable
1.3
--
ms
Thermal Shutdown
Thermal Shutdown
TSD
--
--
150
10
--
--
°C
°C
Thermal Shutdown
Hysteresis
TSD
Logic Inputs
ENx
Thershold
Voltage
Logic-High VENx_H
Logic-Low VENx_L
SMPS On
SMPS Off
1.6
--
--
--
--
V
0.4
Internal Boost Switch
Internal Boost Switch On-
Resistance
RBST
LDO5 to BOOTx
--
80
--
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8
DS6575C/D-02 February 2016