RT6575E
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Power MOSFET Drivers
High state, VBOOTx VUGATEx = 0.25V,
VBOOTx VPHASEx = 5V
--
--
--
3
2
3
--
--
UGATEx On-Resistance
RUGATEx
Low state, VUGATEx VPAHSEx = 0.25V,
VBOOTx VPHASEx = 5V
High state, VLDO5 VLGATEx = 0.25V,
VLDO5 = 5V
--
LGATEx On-Resistance
Dead-Time
RLGATEx
Low state, VLGATEx GND = 0.25V
LGATEx rising
--
--
--
1
--
20
30
--
tD
ns
--
UGATEx rising
Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions may affect device reliability.
Note 2. θJA is measured under natural convection (still air) at TA = 25°C with the component mounted on a high effective-
thermal-conductivity four-layer test board on a JEDEC 51-7 thermal measurement standard. θJC is measured at the
exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Copyright 2018 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS6575E-00 August 2018
www.richtek.com
9
RICHTEK [ RICHTEK TECHNOLOGY CORPORATION ]
