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CA3082M 参数 Datasheet PDF下载

CA3082M图片预览
型号: CA3082M
PDF下载: 下载PDF文件 查看货源
内容描述: 大电流NPN晶体管通用应用BJT阵列 [HIGH CURRENT NPN TRANSISTOR for general purpose applications BJT Array]
分类和应用: 晶体小信号双极晶体管开关光电二极管驱动
文件页数/大小: 1 页 / 607 K
品牌: ROCHESTER [ Rochester Electronics ]
   
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NTRODUCTION –
CA3082
CA3082
Rochester Electronics has re-introduced and continues to manufacture critically needed semiconductors with the full
authorization of the original manufacturer and an attention to quality that meets or exceeds the original component.
Original Manufacturer:
Re-introduced by
Rochester Electronics on
June, 8, 2012
Original Part Number:
CA3082
Description:
BJT Array
Package:
16 pin DIP
Manufacturing Flow:
MTO
Manufacturing Type:
made from original Intersil wafers
[ by temperature / package type / speed / application ]
Related Devices
CA3082F
CA3082M
CA3081
CA3081E
CA3081F
CA3081M
HIGH CURRENT NPN TRANSISTOR
The CA3081 and CA3082 consist of seven high
current (to 100mA) silicon NPN transistors on a
common monolithic substrate. The CA3081 is
connected in a common collector configuration.
The CA3081 and CA3082 are capable of directly
driving seven segment displays, and light emit-
for general purpose applications
ting diode (LED) displays. These types are also well
suited for a variety of other drive applications,
including relay control and thyristor. The
CA3081 is a common emitter array while
the CA3082 is a common collector array.
Worldwide Corporate Headquarters
16 Malcolm Hoyt Drive . Newburyport, MA 01950
phone
978.462.9332 .
email
sales@rocelec.com .
web
www.rocelec.com
© Rochester Electronics, LLC - All Rights Reserved - 08102012