ICM7170
ICM7170
Absolute Maximum Ratings
T
A
= 25
o
C
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +8.0V
Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . .500mW
Storage Temperature Range . . . . . . . . . . . . . . . . . . -65
o
C to 150
o
C
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . .300
o
C
Input Voltage (Any Terminal) (Note 2) . . . . V
DD
+0.3V to V
SS
-0.3V
Thermal Information
Thermal Resistance (Typical, Note 1)
PDIP Package . . . . . . . . . . . . . . . . . . .
50
N/A
SOIC Package . . . . . . . . . . . . . . . . . . .
75
N/A
Maximum Junction Temperature
Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150
o
C
θ
JA
(
o
C/W)
θ
JC
(
o
C/W)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. Due to the SCR structure inherent in the CMOS process, connecting any terminal at voltages greater than V
DD
or less than V
SS
may cause destructive
device latchup. For this reason, it is recommended that no inputs from external sources not operating on the same power supply be applied to the
device before its supply is established, and that in multiple supply systems, the supply to the ICM7170 be turned on first.
Electrical Specifications
PARAMETER
V
DD
Supply Range, V
DD
T
A
= -40
o
C to 85
o
C, V
DD
+5V
±10%,
V
BACKUP
V
DD
, V
SS
= 0V Unless Otherwise Specified
All I
DD
specifications include all input and output leakages (ICM7170 and ICM7170A)
TEST CONDITIONS
f
OSC
= 32kHz
f
OSC
= 1, 2, 4MHz
MIN
1.9
2.6
ICM7170
ICM7170A
-
-
-
-
-
-
2.4
-
2.4
-10
-10
2.6
1.9
INT SOURCE
Connected to V
SS
-
-
-
TYP
-
-
1.2
1.2
20
0.3
1.0
-
-
-
-
0.5
0.5
-
-
0.5
8
6
MAX
5.5
5.5
20.0
5.0
150
1.2
2.0
0.8
-
0.4
-
+10
+10
V
DD
- 1.3
V
DD
- 1.3
10
-
-
UNITS
V
V
µA
Standby Current, I
STBY(1)
f
OSC
= 32kHz
Pins 1 - 8,15 - 22 and 24 = V
DD
V
DD
= V
SS
; V
BACKUP
= V
DD
- 3.0V
For ICM7170A See General Notes 5
µA
Standby Current, I
STBY
(2)
Operating Supply Current, I
DD(1)
Operating Supply Current, I
DD(2)
Input Low Voltage (Except Osc.), V
IL
Input High Voltage (Except Osc.), V
IH
Output Low Voltage (Except Osc.), V
OL
Output High Voltage Except
INTERRUPT (Except Osc.), V
OH
Input Leakage Current, I
IL
Three-State Leakage Current
(D0 - D7), I
OL
(1)
Backup Battery Voltage, V
BATTERY
Backup Battery Voltage, V
BATTERY
Leakage Current INTERRUPT, I
OL
(2)
Capacitance D0 - D7, C
I/O
Capacitance A0 - A4, C
ADDRESS
f
OSC
= 4MHz Pins 1 - 8,15 - 22 and 24 = V
DD
V
DD
= V
SS
; V
BACKUP
= V
DD
- 3.0V
f
OSC
= 32kHz, Read/Write Operation at 100Hz
f
OSC
= 32kHz, Read/Write Operation at 1MHz
V
DD
= 5.0V
V
DD
= 5.0V
I
OL
= 1.6mA
I
OH
= -400µA
V
IN
= V
DD
or V
SS
V
O
= V
DD
or V
SS
f
OSC
= 1, 2, 4MHz
f
OSC
= 32kHz
V
O
= V
DD
µA
mA
mA
V
V
V
V
µA
µA
V
V
µA
pF
pF
Specification Number ICM7170_IM (IL) REV -
3
Page 4 of 14
ROCHESTER [ Rochester Electronics ]
