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X28HC256PI-90 参数 Datasheet PDF下载

X28HC256PI-90图片预览
型号: X28HC256PI-90
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗CMOS EEPROM与高速页写能力256K EEPROM [LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 21 页 / 977 K
品牌: ROCHESTER [ Rochester Electronics ]
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X28HC256  
Absolute Maximum Ratings  
Thermal Information  
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . .-10°C to +85°C  
X28HC256 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +135°C  
X28HC256I, X28HC256M . . . . . . . . . . . . . . . . . .-65°C to +150°C  
Voltage on any Pin with Respect to VSS . . . . . . . . . . . . . -1V to +7V  
DC Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C  
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below  
http://www.intersil.com/pbfree/Pb-FreeReflow.asp  
*Pb-free PDIPs can be used for through hole wave solder  
processing only. They are not intended for use in Reflow solder  
processing applications.  
Operating Conditions  
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
Commerical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C  
Industrial. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C  
Military . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to +125°C  
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ± 10%  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
DC Electrical Specifications  
Over Recommended Operating Conditions, Unless Otherwise Specified.  
LIMITS  
TYP  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
(Note 7)  
MAX  
UNIT  
VCC Active Current  
(TTL Inputs)  
ICC  
CE = OE = VIL, WE = VIH, All I/O’s = open,  
address inputs = .4V/2.4V levels @ f = 10MHz  
30  
1
60  
mA  
VCC Standby Current  
(TTL Inputs)  
ISB1  
CE = VIH, OE = VIL, All I/O’s = open, other inputs = VIH  
2
mA  
µA  
V
CC Standby Current  
ISB2  
CE = VCC - 0.3V, OE = GND, All I/Os = open, other  
inputs = VCC - 0.3V  
200  
500  
(CMOS Inputs)  
Input Leakage Current  
Output Leakage Current  
Input LOW Voltage  
Input HIGH Voltage  
Output LOW Voltage  
Output HIGH Voltage  
NOTES:  
ILI  
VIN = VSS to VCC  
10  
10  
µA  
µA  
V
ILO  
VOUT = VSS to VCC, CE = VIH  
V
lL (Note 2)  
IH (Note 2)  
VOL  
-1  
2
0.8  
V
VCC + 1  
0.4  
V
IOL = 6mA  
V
VOH  
IOH = -4mA  
2.4  
V
1. Typical values are for TA = +25°C and nominal supply voltage.  
2. VIL min. and VIH max. are for reference only and are not tested.  
Power-up Timing  
PARAMETER  
SYMBOL  
PUR, Note 3  
tPUW, Note 3  
MAX  
100  
5
UNIT  
µs  
Power-up to read  
Power-up to write  
NOTE:  
t
ms  
3. This parameter is periodically sampled and not 100% tested.  
FN8108.2  
May 7, 2007  
10