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X28HC256JM-90 参数 Datasheet PDF下载

X28HC256JM-90图片预览
型号: X28HC256JM-90
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗CMOS EEPROM与高速页写能力256K EEPROM [LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 21 页 / 977 K
品牌: ROCHESTER [ Rochester Electronics ]
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N
EW
P
RODUCT
I
NTRODUCTION –
X28HC256DM-12
Rochester Electronics has re-introduced and continues to manufacture critically needed semiconductors with the full
authorization of the original manufacturer and an attention to quality that meets or exceeds the original component.
Original Manufacturer:
X28HC256DM-12
Re-introduced by
Rochester Electronics on
October, 31, 2012
Original Part Number:
X28HC256DM-12
Description:
256K EEPROM
Package:
28 pin DIP
Manufacturing Flow:
MTO
Endurance:
1,000,000 cycles
Available in
Pb-Free
versions
[ by temperature / package type / speed / application ]
Related Devices
X28HC256D-12
X28HC256D-90
X28HC256DI-15
X28HC256DMB-15
X28HC256EI-12
X28HC256FM-90
X28HC256JM-15T1
X28HC256KI-15
X28HC256PM-12
X28HC256KMB-15
LOW POWER CMOS EEPROM
with hi-speed page write capability
The X28HC256 is a second generation high
performance CMOS 32k x 8 EEPROM. It is fabricated
with Intersil’s proprietary, textured poly floating
gate technology, providing a highly reliable 5V only
nonvolatile memory. The X28HC256 supports a 128-
byte page write operation, effectively providing
a 24µs/byte write cycle, and enabling the entire
memory to be typically rewritten in less than 0.8
seconds. The X28HC256 also features DATA
Polling and Toggle Bit Polling, two methods
of providing early end of write detection.
Worldwide Corporate Headquarters
16 Malcolm Hoyt Drive . Newburyport, MA 01950
phone
978.462.9332 .
email
sales@rocelec.com .
web
www.rocelec.com
© Rochester Electronics, LLC - All Rights Reserved - 11162012