1SS355
Diodes
Switching diode
1SS355
Applications
High speed switching
Dimensions
(Unit : mm)
1.25±0.1
0.1±0.1
0.05
Land size figure
(Unit : mm)
0.9MIN.
1.7±0.1
2.5±0.2
Features
1) Ultra small mold type.(UMD2)
2) High reliability.
0.8MIN.
Construction
Silicon epitaxial planar
0.3±0.05
0.7±0.2
0.1
UMD2
Structure
ROHM : UMD2
JEDEC : S0D-323
JEITA : SC-90/A
dot (year week factory)
Taping specification
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
1.75±0.1
0.3±0.1
3.5±0.05
8.0±0.2
1.40±0.1
4.0±0.1
φ1.05
1.0±0.1
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current
Average rectified forward current
Surge current
（t=1s）
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
Io
I
surge
Tj
Tstg
Limits
90
80
225
100
500
150
-55 to +150
Unit
V
V
mA
mA
mA
℃
℃
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V
F
I
R
Ct
trr
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.2
0.1
3
4
Unit
V
µA
pF
ns
Conditions
I
F
=100mA
V
R
=80V
V
R
=0.5V , f=1MHz
V
R
=6V , IF=10mA , RL=100Ω
2.75
Rev.C
2.8±0.1
2.1
1/3
ROHM [ ROHM ]
