Band Switching Diode
1SS356
Applications
High frequency switching
Dimensions
(Unit : mm)
1.25±0.1
0.1±0.1
0.05
Land
size figure
(Unit : mm)
1.7±0.1
2.5±0.2
Features
1)Ultra small mold type. (UMD2)
2)High reliability
0.8MIN.
0.9MIN.
UMD2
Construction
Silicon epitaxial planar
0.3±0.05
0.7±0.2
0.1
Structure
ROHM : UMD2
JEDEC : SOD-323
JEITA : SC-90/A
dot (year week factory)
Taping
specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
1.75±0.1
0.3±0.1
3.5±0.05
8.0±0.2
1.40±0.1
4.0±0.1
φ1.05
1.0±0.1
Absolute
maximum ratings
(Ta=25°C)
Parameter
Symbol
I
F
Forward current (DC)
V
R
Reverse voltage (DC)
Junction temperature
Tj
Storage temperature
Tstg
Limits
100
35
125
55
to
125
Unit
mA
V
°C
°C
Electrical
characteristics
(Ta=25°C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
Capacitance between terminals
Forward operating resistance
I
R
Ct
rf
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.0
10
1.2
0.9
Unit
V
nA
pF
Ω
I
F
=10mA
V
R
=25V
2.75
Conditions
V
R
=6V , f=1MHz
I
F
=2mA , f=100MHz
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1/3
2011.08 - Rev.D
2.8±0.1
2.1
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