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2N4401 参数 Datasheet PDF下载

2N4401图片预览
型号: 2N4401
PDF下载: 下载PDF文件 查看货源
内容描述: NPN型中功率晶体管 [NPN Medium Power Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 83 K
品牌: ROHM [ ROHM ]
 浏览型号2N4401的Datasheet PDF文件第2页浏览型号2N4401的Datasheet PDF文件第3页  
UMT4401 / SST4401 / MMST4401 / 2N4401
Transistors
NPN Medium Power Transistor
(Switching)
UMT4401 / SST4401 / MMST4401 / 2N4401
!
External dimensions
(Units : mm)
!Features
1) BV
CEO
>40V
(I
C
=1mA)
2) Complements the UMT4403 / SST4403 / MMST4403
/ PN4403.
UMT4401
2.0±0.2
1.3±0.1
0.65 0.65
(1)
(2)
0.2
0.9±0.1
0.7±0.1
1.25
±
0.1
2.1
±
0.1
0
~
0.1
(3)
ROHM : UMT3
EIAJ : SC-70
0.3+0.1
0.15±0.05
−0
All terminals have the same
dimensions
2.9
±
0.2
1.9
±
0.2
0.95 0.95
(1)
(2)
!
Package, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
UMT4401
UMT3
R2X
T106
3000
SST4401
SST3
R2X
T116
3000
MMST4401
SMT3
R2X
T146
3000
2N4401
TO-92
-
T93
3000
SST4401
0.95 +0.2
0.1
0.45
±
0.1
2.4±0.2
1.3+0.2
0.1
0
~
0.1
0.2Min.
(3)
All terminals have the same
dimensions
+0.1
0.1~0.4
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
0.4 +0.1
0.05
0.15
0.06
(1) Emitter
(2) Base
(3) Collector
MMST4401
2.9
±
0.2
1.9
±
0.2
0.95 0.95
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
60
40
6
0.6
0.2
W
0.625
150
-55~+150
˚C
˚C
(12.7Min.)
1.1+0.2
0.1
0.8
±
0.1
V
V
V
A
(3)
Junction temperature
Storage temperature
Tj
Tstg
0.5
±
0.1.
(1)
(2)
5
(3)
2.5Min.
2N4401
4.8
±
0.2
Collector power
dissipation
UMT4401
SST4401
MMST4401
ROHM : SMT3
EIAJ : SC-59
0.4 +0.1
0.05
4.8
±
0.2
0.15
0.06
P
C
2N4401
3.7
±
0.2
0.3
~
0.6
All terminals have the same
+0.1
dimensions
1.6+0.2
0.1
2.8±0.2
Unit
(1)
(2)
0~0.1
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
+0.3
2.5
0.1
0.45
±
0.1
2.3
(1) Emitter
(2) Base
(3) Collector
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
Min.
60
40
6
-
-
-
-
-
-
20
40
DC current transfer ratio
h
FE
80
100
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
f
T
Cob
Cib
td
tr
tstg
tf
40
250
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
0.4
0.75
0.95
1.2
-
-
-
300
-
-
6.5
30
15
20
225
30
MHz
pF
pF
ns
ns
ns
ns
-
Unit
V
V
V
µA
µA
V
V
I
C
=100µA
I
C
=1mA
I
E
=100µA
V
CB
=35V
V
EB
=5V
I
C
/I
B
=150mA/15mA
I
C
/I
B
=500mA/50mA
I
C
/I
B
=150mA/15mA
I
C
/I
B
=500mA/50mA
V
CE
=1V,
I
C
=0.1mA
V
CE
=1V,
I
C
=1mA
V
CE
=1V,
I
C
=10mA
V
CE
=1V,
I
C
=150mA
V
CE
=2V,
I
C
=500mA
V
CE
=10V,
I
E
=-20mA,
f=100MHz
V
CB
=10V,
f=100kHz
V
EB
=0.5V,
f=100kHz
V
CC
=30V,
V
EB(OFF)
=2V,
I
C
=150mA,
I
B1
=15mA
V
CC
=30V,
V
EB(OFF)
=2V,
I
C
=150mA,
I
B1
=15mA
V
CC
=30V,
I
C
=150mA,
I
B1
=-I
B2
=15mA
V
CC
=30V,
I
C
=150mA,
I
B1
=-I
B2
=15mA
Conditions