Medium Power Transistor (-32V, -05A)
2SA1577
Features
1) Large I
C
.
I
CMAX.
= -500mA
2) Low V
CE(sat).
Ideal for low-voltage operation.
3) Complements the 2SC4097.
Structure
Epitaxial planer type
PNP silicon transistor
Dimensions
(Unit : mm)
2SA1577
2.0
±
0.2
1.3
±
0.1
0.65 0.65
(1)
(2)
0.9
±
0.1
0.2
0.7
±
0.1
1.25
±
0.1
2.1
±
0.1
0
∼
0.1
(3)
0.3
+
0.1
−
0
0.15
±
0.05
All terminals have
same dimensions
Absolute
maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−40
−32
−5
−0.5
0.2
150
−55
to +150
Unit
V
V
V
A
W
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol: H
∗
∗
Denotes h
∗
FE
°C
°C
∗
P
C MAX.
must not be exceeded.
Electrical
characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Rmitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−40
−32
−5
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
200
7
Max.
−
−
−
−1
−1
−0.6
390
−
−
Unit
V
V
V
μA
μA
V
−
MHz
pF
I
C
=
−1mA
I
E
=
−100μA
V
CB
=
−20V
V
EB
=
−4V
I
C
/I
B
=
−300mA/−30mA
V
CE
=
−3V,
I
C
=
−100mA
V
CE
=
−5V,
I
E
=20mA, f=100MHz
V
CB
=
−10V,
I
E
=0A, f=1MHz
Conditions
I
C
=
−100μA
Packaging
specifications
Package
Code
Type
2SA1577
h
FE
QR
Basic ordering unit (pieces)
Taping
T106
3000
h
FE
values are classifies as follows.
Item
h
FE
Q
120 to 270
R
180 to 390
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○
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.12 - Rev.B
0.1
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