2SA1797
Transistors
Power Transistor (−50V,
−3A)
2SA1797
Features
1) Low saturation voltage.
V
CE (sat)
=
−0.35V
(Max.) at I
C
/ I
B
=
−1A
/
−50mA.
2) Excellent DC current gain characteristics.
3) Complements the 2SC4672.
External dimensions
(Unit : mm)
MPT3
4.5
1.6
0.5
1.5
(1)
(2)
(3)
1.0
Packaging specifications
Type
2SA1797
MPT3
PQ
AG
∗
T100
1000
(1)Base
(2)Collector
(3)Emitter
0.4
1.5
3.0
0.5
1.5
0.4
2.5
4.0
0.4
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
∗Denotes
h
FE
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
+
Limits
−50
−50
−6
−3
−6
0.5
2
150
−55~+150
Unit
V
V
V
A (DC)
A (Pulse)
∗
1
W
∗
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power 2SA1797
dissipation
Junction temperature
Storage temperature
+
°C
°C
∗1
Single pulse, Pw=10ms
∗2
When mounted on a 40 40 0.7mm ceramic board.
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−50
−50
−6
−
−
−
82
−
−
Typ.
−
−
−
−
−
−0.15
−
200
36
Max.
−
−
−
−0.1
−0.1
−0.35
270
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−50V
Conditions
V
EB
=−5V
I
C
/I
B
=−1A/−50mA
V
CE
/I
C
=−2V/−0.5A
V
CE
=−2V,
I
E
=0.5A,
f=100MHz
V
CB
=−10V,
I
E
=0A,
f=1MHz
∗
∗
Rev.B
1/2
ROHM [ ROHM ]
