Power Transistor (−80V,
−1A)
2SB1260 / 2SB1181
Features
1) Hight breakdown voltage and high current.
BV
CEO
=
−80V,
I
C
=
−1A
2) Good h
FE
linearty.
3) Low V
CE(sat)
.
4) Complements the 2SD1898 / 2SD1733.
Dimensions
(Unit : mm)
2SB1260
4.5
+0.2
1.6±0.1
1.5±
2SB1181
1.5
±
0.3
6.5
±
0.2
5.1
+
0.2
C0.5
2.3
+
0.2
0.5
±
0.1
0.5±0.1
5.5
+
0.3
4.0
±0.3
2.5
+0.2
0.75
(1)
(2)
(3)
0.4±0.1
1.5±0.1
0.4
+0.1
0.65
±
0.1
0.9
1.0±0.2
0.55
±
0.1
2.3
±
0.2
2.3
±
0.2
1.0
±
0.2
Structure
Epitaxial planar type
PNP silicon transistor
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
(1) (2) (3)
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
Absolute
maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SB1260
Collector power
dissipation
2SB1181
2SB1181
Junction temperature
Storage temperature
Tj
Tstg
P
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Limits
−80
−80
−5
−1
−2
0.5
2
1
10
150
−55
to +150
W (Tc=25
°C
)
∗2
∗1
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
∗
1
∗
2
2SB1260 : Pw=20ms duty=1/2
2SB1260 : When mounted on a 40
×
40
×
0.7 mm ceramic board.
Electrical
characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency 2SB1181
Output capacitance
2SB1260
2SB1181
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−80
−80
−5
−
−
−
120
−
−
−
Typ.
−
−
−
−
−
−
−
100
20
25
Max.
−
−
−
−1
−1
−0.4
390
−
−
−
Unit
V
V
V
I
C
= −50μ
A
I
C
= −1mA
I
E
= −50μ
A
V
CB
= −60V
V
EB
= −4V
I
C
/I
B
= −500mA/ −50mA
V
CE
= −3V,
I
C
= −0.1A
V
CE
= −10V,
I
E
=50mA,
f=100MHz
V
CB
= −10V
I
E
=0A
f=1MHz
Conditions
μ
A
μ
A
V
−
MHz
pF
pF
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c
○
2012 ROHM Co., Ltd. All rights reserved.
1/2
2012.01 - Rev.G
2.5
9.5
±
0.5
0.9
1.5
ROHM [ ROHM ]
