Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulate Transistors
2SB1424
FEATURES
Power dissipation
2.
COLLECTOR
P
CM
:
600
mW (Tamb=25℃)
3.
EMITTER
1
2
3
TRANSISTOR (PNP)
SOT-89
1.
BASE
Collector current
-3
A
I
CM
:
Collector-base voltage
-20
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-50
µA,
I
E
=0
Ic=
-1
mA, I
B
=0
I
E
=
-50
µA,
I
C
=0
V
CB
=
-20
V, I
E
=0
V
EB
=
-5
V, I
C
=0
V
CE
=
-2
V, I
C
=
-100
mA
I
C
=
-2
A, I
B
=
-100
mA
V
CE
=
-2
V, I
C
=
-500
mA, f=100MHz
V
CB
=
-10
V, I
E
=0, f=
1
MHz
-20
-20
-6
-0.1
-0.1
120
390
-0.5
240
35
µA
µA
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
Q
120-270
AEQ
R
180-390
AER
ROHM [ ROHM ]
