General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
Features
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2. Complements the 2SA1037AK / 2SA1576A /
2SA1774H / 2SA2029 / 2SA933AS.
Dimensions
(Unit : mm)
(1)
2SC2412K
2SC4081
(1)
2SC4617
0.65 0.65
(2)
0.95 0.95
1.9
2.9
1.3
2.0
(1)
(2)
0.2
0.5 0.5
(3)
0.4
(3)
0.3
1.6
2.1
0.8
0.2
Structure
Epitaxial planar type
NPN silicon transistor
2.8
0.15
1.6
0.7
0.9
0.15
0.2
1.25
0.3
(3)
0.55
0.15
0.8
1.1
0~0.1
0.3Min.
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
0~0.1
0.1Min.
0.1Min.
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Emitter
(2) Base
(3) Collector
0~0.1
ROHM :
EMT3
(1) Emitter
(2) Base
(3) Collector
EIAJ : SC-75A
JEDEC : SOT-416
Abbreviated symbol: B*
Abbreviated symbol: B*
Abbreviated symbol: B*
2SC5658
0.2
1.2
0.8
(2)
(3)
(1)
2SC1740S
4±0.2
2±0.2
3±0.2
0.2
1.2
0.32
0.4 0.4
0.8
0.22
(15Min.)
0.13
0~0.1
0.5
0.45+0.15
−
0.05
0.15Max.
5
3Min.
2.5 +0.4
−
0.1
0.5
+0.15
0.45
−
0.05
(1) (2) (3)
ROHM : VMT3
(1) Base
(2) Emitter
(3) Collector
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
Abbreviated symbol: B*
* Denotes h
FE
Absolute
maximum
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SC2412K, 2SC4081
Collector power
2SC4617, 2SC5658
dissipation
2SC1740S
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
60
50
7
0.15
0.2
P
C
0.15
0.3
Tj
Tstg
150
−55
to
+150
°C
°C
W
Unit
V
V
V
A
Electrical
characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
7
−
−
120
−
−
−
Typ.
−
−
−
−
−
−
−
180
2
Max.
−
−
−
0.1
0.1
390
0.4
−
3.5
Unit
V
V
V
μA
μA
−
V
MHz
pF
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=60V
V
EB
=7V
V
CE
=6V, I
C
=1mA
I
C
/I
B
=50mA/5mA
V
CE
=12V, I
E
=−2mA, f=100MHz
V
CE
=12V, I
E
=0A, f=1MHz
Conditions
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2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.C
0.7
1.0
1.6
(2)
ROHM [ ROHM ]
