2SC5103
Transistors
High speed switching transistor (60V, 5A)
2SC5103
!
Features
1) Low V
CE(sat)
(Typ. 0.15V at I
C
/ I
B
=
3 / 0.15A)
2) High speed switching (tf : Typ. 0.1
µs
at I
C
=
3A)
3) Wide SOA. (safe operating area)
4) Complements the 2SA1952.
!
External dimensions
(Units : mm)
0.75
5.5
1.5
(3) (2) (1)
2.3
0.9
0.9
0.65
2.3
5.1
6.5
C0.5
1.0
0.5
0.5
1.5
2.5
9.5
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗
Single pulse Pw=100ms
ROHM : CPT3
EIAJ : SC-63
Unit
V
V
V
A(DC)
A(Pulse)
∗
W
W(Tc=25°C)
°C
°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
100
60
5
5
10
1
10
150
−55~+150
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SC5103
CPT3
PQ
TL
2500
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
∗
Measured using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
ton
tstg
tf
Min.
100
60
5
−
−
−
−
−
−
82
−
−
−
−
−
Typ.
−
−
−
−
−
0.15
−
−
−
−
120
80
−
−
0.1
Max.
−
−
−
10
10
0.3
0.5
1.2
1.5
270
−
−
0.3
1.5
0.3
Unit
V
V
V
µA
µA
V
V
V
V
−
MHz
pF
µs
µs
µs
Conditions
I
C
=
50µA
I
C
=
1mA
I
E
=
50µA
V
CB
=
100V
V
EB
=
5V
I
C
/I
B
=
3A/0.15A
I
C
/I
B
=
4A/0.2A
I
C
/I
B
=
3A/0.15A
I
C
/I
B
=
4A/0.2A
V
CE
/I
C
=
2V/1A
V
CB
=
10V , I
E
=
0.5A , f
=
30MHz
V
CE
=
10V , I
E
=
0A , f
=
1MHz
I
C
=
3A , R
L
=
10Ω
I
B1
=
−I
B2
=
0.15A
V
CC
30V
∗
∗
∗
∗
∗
2.3
0.8Min.
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM [ ROHM ]
