2SD1760 / 2SD1864
Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
!
Features
1) Low V
CE(sat)
.
V
CE(sat)
= 0.5V (Typ.)
(I
C
/I
B
= 2A / 0.2A)
2) Complements the 2SB1184 / 2SB1243.
!
External dimensions
(Units : mm)
2SD1760
1.5±0.3
6.5±0.2
5.1 +0.2
−0.1
C0.5
2.3 +0.2
−0.1
0.5±0.1
2SD1864
6.8
±
0.2
2.5
±
0.2
5.5 +0.3
−0.1
9.5±0.5
0.9
1.5
!
Structure
Epitaxial planar type
NPN silicon transistor
0.9
0.55±0.1
2.3±0.2 2.3±0.2
1.0±0.2
(1)
(2)
(3)
0.5
±
0.1
2.54 2.54
14.5
±
0.5
0.75
0.65±0.1
2.5
0.65Max.
1.0
4.4
±
0.2
0.9
(1) (2) (3)
1.05
0.45
±
0.1
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SD1760
2SD1864
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
60
50
5
3
4.5
15
1
150
−55~+150
Unit
V
V
V
A (DC)
A (Pulse)
*
1
W (Tc =25°C)
*
2
W
°C
°C
Junction temperature
Storage temperature
W
*
1 Single pulse, P = 100ms
*
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
ROHM [ ROHM ]
