2SD1766 / 2SD1758 / 2SD1862
Transistors
Medium Power Transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
Features
1) Low V
CE(sat)
.
V
CE(sat)
= 0.5V(Typ.)
（I
C
/ I
B
= 2A / 0.2A）
2) Complements the 2SB1188 / 2SB1182 /
2SB1240.
External dimensions
(Unit : mm)
2SD1766
0.5±0.1
4.5
+0.2
−0.1
1.6±0.1
1.5
+0.2
−0.1
2SD1758
1.5
±
0.3
6.5
±
0.2
5.1
+
0.2
−
0.1
C0.5
2.3
+
0.2
−
0.1
0.5
±
0.1
4.0±0.3
2.5
+0.2
−0.1
5.5
+
0.3
−
0.1
1.0±0.2
0.4
+0.1
−0.05
0.4±0.1
1.5±0.1
0.75
0.9
2.3
±
0.2
0.65
±
0.1
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
2.3
±
0.2
0.55
±
0.1
1.0
±
0.2
Abbreviated symbol : DB
∗
(1) (2) (3)
Structure
Epitaxial planar type
NPN silicon transistor
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SD1862
6.8
±
0.2
2.5
±
0.2
0.65Max.
1.0
0.5
±
0.1
(1)
(2)
(3)
2.54 2.54
1.05
14.5
±
0.5
4.4
±
0.2
0.9
0.45
±
0.1
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
∗
Denotes h
FE
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Collector
power
dissipation
Limits
40
32
5
2
2.5
0.5
2
P
C
1
10
1
150
−55
to
+150
Unit
V
V
V
A (DC)
A (Pulse)
∗
1
2SD1766
2SD1758
2SD1862
∗
2
∗
3
W
W
W (Tc=25
°C
)
W
°C
°C
Junction temperature
Storage temperature
Tj
Tstg
∗
1 Single pulse, Pw=20ms
∗
2 When mounted on a 40×40×0.7 mm ceramic board.
∗
3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm
2
or lager.
Rev.A
2.5
(1)
(2)
(3)
9.5
±
0.5
0.9
1.5
1/3
ROHM [ ROHM ]
