2SD2170
Transistors
Medium Power Transistor
+20
(Motor, Relay drive) (90
−10
, 2A)
2SD2170
!Features
1) Built-in zener diode between collector and base.
2) Zener diode has low dispersion.
3) Strong protection against reverse power surges due to
"L" loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
!
External dimensions
(Units : mm)
4.0
1.0
2.5
0.5
1.5
0.4
(1)
3.0
0.5
(3)
4.5
1.6
(2)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
1.5
0.4
ROHM : MPT3
EIAJ : SC-62
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
Tj
Tstg
Limits
90
90
6
2
3
2
150
−55~+150
+20
−10
+20
−10
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
*
1
*
2
*
1
*
2
Single pulse Pw = 10ms , Duty = 1 / 2
When mounted on a 40 x 40 x 0.7 mm ceramic board.
!Packaging
specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
2SD2170
MPT3
1k~10k
DM
T100
1000
!Circuit
diagram
C
0.4
B
R
1
E : Emitter
B : Base
C : Collector
R
1
R
2
R
2
E
3.5kΩ
300
Ω
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
80
80
-
-
-
1000
-
-
Typ.
-
-
-
-
-
-
80
25
Max.
110
110
10
3
1.5
10000
-
-
Unit
V
V
µA
mA
V
-
MHz
pF
I
C
= 50µA
I
C
= 1mA
V
CB
= 70V
V
EB
= 5V
I
C
/I
B
= 1A/1mA
V
CE
= 2V , I
C
= 1A
V
CE
= 5V , I
E
=
−0.1A
, f = 30MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
Conditions
*
1
*
1
*
2
*
1 Measured using pulse current.
*
2 Transition frequency of the device.
1.5
ROHM [ ROHM ]
