2SD2153
Transistors
High gain amplifier transistor (25V, 2A)
2SD2153
Features
1) Low saturation voltage,
typically V
CE(sat)
= 0.12V at I
C
= I
B
= 1A / 20mA
2) Excellent DC current gain characteristics.
External dimensions
(Unit : mm)
4.0
1.0
2.5
0.5
1.5
0.4
(1)
1.6
3.0
0.5
(3)
4.5
(2)
(1) Base
(2) Collector
(3) Emitter
1.5
0.4
ROHM : MPT3
EIAJ : SC-62
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
+
+
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
25
6
2
3
0.5
2
150
−55
to
+150
∗2
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
∗1
∗1
Single pulse, Pw=10ms
∗2
Mounted on a 40 40
t
0.7mm Ceramic substrate
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
∗
Denotes h
FE
2SD2153
MPT3
UVW
DN
T100
1000
∗
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
30
25
6
−
−
−
560
−
−
Typ.
−
−
−
−
−
0.12
−
110
22
Max.
−
−
−
0.5
0.5
0.5
2700
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
I
C
=
50µA
I
C
=
1mA
I
E
=
50µA
V
CB
=
20V
V
EB
=
5V
I
C
/I
B
=
1A/20mA
V
CE
/I
C
=
6V/0.5A
V
CE
=
10V , I
E
= −10mA
, f= 100MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
0.4
1.5
∗
Rev.A
1/2
ROHM [ ROHM ]
