BAV70 / BAW56 / BAV99
Diodes
Absolute maximum ratings
(Ta=25°C)
Type
Peak
reverse
voltage
V
RM
(V)
75
85
85
DC
reverse
voltage
V
R
(V)
70
70
75
Peak
forward
current
I
FM
(mA)
450
450
450
Mean
rectifying
current
I
F
(mA)
215
215
215
Surge
current
(1µs)
I
surge
(A)
4
4
4
Storage
Power
Junction
dissipation temperature temperature
(TOTAL)
Tj (°C)
Tstg (°C)
Pd (mW)
300
225
300
150
150
150
−55
to
+150
−55
to
+150
−55
to
+150
P / N Type
BAV70
BAW56
BAV99
N
P
N
Electrical characteristics
(Ta=25°C)
Forward voltage
Type
V
F
(V)
Max.
1.25
1.25
1.25
Cond.
I
F
(mA)
150
150
150
Reverse current
I
R
(µA)
Max.
2.5
1.0
1.0
Cond.
V
R
(V)
70
75
75
Capacitance between terminals
C
T
(pF)
Max.
1.5
2.0
1.5
Cond.
V
R
(V)
0
0
0
f (MHz)
1
1
1
t
rr
(ns)
Max.
4
4
4
Reverse recovery time
Cond.
V
R
(V)
10
10
10
I
F
(mA)
10
10
10
BAV70
BAW56
BAV99
Electrical characteristic curves
(Ta=25°C)
125
(%)
Max.
50
FORWARD CURRENT : I
F
(mA)
1000
Ta=100°C
REVERSE CURRENT : I
R
(nA)
POWER DISSIPATION : Pd / Pd
100
20
10
5
2
1
0.5
0.2
Ta=85°C
50°C
25°C
0°C
−30°C
100
75°C
50°C
25°C
75
10
50
1
0°C
−25°C
25
0.1
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta
(
°C)
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0
10
20
30
40
50
FORWARD VOLTAGE : V
F
(V)
REVERSE VOLTAGE : V
R
(V)
Fig.1 Power attenuation curve
Fig.2 Forward characteristics
(P Type)
Fig.3 Reverse characteristics
(P Type)
50
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
1000
FORWARD CURRENT : I
F
(mA)
REVERSE CURRENT : I
R
(nA)
Ta=100°C
75°C
50°C
f=1MHz
4
20
10
5
2
1
0.5
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Ta=85°C
50°C
25°C
0°C
−30°C
100
10
25°C
0°C
−25°C
1
2
P Type
0.1
N Type
0
0.01
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10 12 14 16 18 20
FORWARD VOLTAGE : V
F
(V)
REVERSE VOLTAGE : V
R
(V)
REVERSE VOLTAGE : V
R
(V)
Fig.4 Forward characteristics
(N Type)
Fig.5 Reverse characteristics
(N Type)
Fig.6 Capacitance between
terminals characteristics
2/3
ROHM [ ROHM ]
