BC847B
Transistors
V
CE
COLLECTOR-EMITTER VOLTAGE (V)
1000
Ta=25°C
V
CC
=40V
I
C
=101
B1
=101
B2
100
Ta=25°C
f=1MHz
50 100MHz 200MHz 300MHz 400MHz
Ta=25°C
CAPACITANCE (pF)
400MHz
t
f
-FALL TIME (ns)
100
10
Cib
5.0
300MHz
200MHz
100MHz
Cob
10
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
1
0.5
1
10
REVERSE BIAS VOLTAGE (V)
5
0
0.5
0.5
10
100
I
C
-COLLECTOR CURRENT (mA)
500
Fig.12 Fall time vs. collector
current
Fig.13 Input/output capacitance
vs. voltage
Fig.14 Gain bandwidth product
CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
h PARAMETER NORMALIZED TO 1mA
Ta=25°C
V
CE
=5V
I
CBO
-COLLECTOR CUTOFF CURRENT (A)
1000
100
Ta=25°C
V
CE
=6V
f=270Hz
hoe
10n
V
CB
=30V
1n
10
hie
hre
hfe
hre
100P
100
hfe
I
C
=1mA
hie=7.8kΩ
hfe=280
hie
hre=4.5×10
−5
hoe=7.5µS
100
10P
1
hoe
0.1
0.1
1P
10
0.5 1.0
10
100
I
C
-COLLECTOR CURRENT (mA)
500
1
10
I
C
-COLLECTOR CURRENT (mA)
0.1P
0
25
50
75
100
125
T
A
-AMBIENT TEMPERATURE (°C)
150
Fig.15 Gain bandwidth product
vs. collector current
Fig.16 h parameter
vs. collector current
Fig.17 Collector cutoff current
12
10
R
S
-SOURCE RESISTANCE (Ω)
NF NOISE FIGURE (dB)
Ta=25°C
V
CE
=5V
I
C
=100µA
R
S
=10kΩ
100k
Ta=25°C
V
CE
=5V
f=10Hz
dB
12
B
8d
B
5d
3d
B
d
=
1
NF
B
10k
8
6
4
2
0
10
1k
100
1k
f-FREQUENCY (Hz)
10k
100k
100
0.01
0.1
1
I
C
-COLLECTOR CURRENT (mA)
10
Fig.18 Noise vs. collector current
Fig.19 Noise characteristics ( )
Rev.A
4/5
ROHM [ ROHM ]
