BR24C21F-E2 参数 Datasheet PDF下载

Memory for Plug & Play

EDID Memory

(For display)

BR24C21,BR24C21F,BR24C21FJ,BR24C21FV,

BU9882-W,BU9882F-W,BU9882FV-W

BR24C21,BR24C21F,BR24C21FJ,BR24C21FV

●Description

TM

TM

BR24C21F,BR24C21FJ,BR24C21FV are serial EEPROMs that support DDC1 /DDC2 interfaces

for Plug and Play displays.

●Features

TM

TM

1) Compatible with both DDC1 /DDC2

2) Operating voltage range: 2.5V to 5.5V

3) Page write function: 8bytes

4) Low power consumption

Active (at 5V)

: 1.5mA (typ)

Stand-by (at 5V) : 0.1µA (typ)

5) Address auto increment function during Read operation

6) Data security

Write enable feature (VCLK)

Write protection at low Vcc

7) Various packages available: DIP-T8(BR24C21) / SOP8(BR24C21F) / SOP-J8(BR24C21FJ) / SSOP-B8(BR24C21FV)

8) Initial data=FFh

9) Data retention: 10years

10) Rewriting possible up to 100,000 times

No.11002ECT02

●Absolute

maximum ratings (Ta=25℃)

Parameter

Supply Voltage

Symbol

V

CC

800

450

450

350

Rating

-0.3�½�+6.5

(DIP-T8)

(SOP8)

(SOP-J8)

(SSOP-B8)

-65�½�+125

-40�½�+85

-0.3�½�V

CC

+0.3

Unit

V

*1

*2

*3

*4

Power Dissipation

Pd

mW

Storage Temperature

Operating Temperature

Terminal Voltage

Tstg

Topr

-

℃

℃

V

* Reduce by 8.0 mW/C over 25C (*1), 4.5mW/℃ (*2,3), and 3.5mW/℃ (*4)

●Memory

cell characteristics

Parameter

Supply Voltage

Input Voltage

Symbol

V

CC

VIN

Rating

2.5�½�5.5

0�½�V

CC

Unit

V

V

●Recommended

operating conditions

Parameter

Write/Erase Cycle

Data Retention

Min.

100,000

10

Limits

Typ.

-

-

Max.

-

-

Unit

Cycle

Year

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2011.08 - Rev.C