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EMX1 参数 Datasheet PDF下载

EMX1图片预览
型号: EMX1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管(双晶体管) [General purpose transistors (dual transistors)]
分类和应用: 晶体小信号双极晶体管
文件页数/大小: 4 页 / 92 K
品牌: ROHM [ ROHM ]
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EMX1 / UMX1N / IMX1
Transistors
General purpose transistors
(dual transistors)
EMX1 / UMX1N / IMX1
!
Features
1) Two 2SC2412K chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!
External dimensions
(Units : mm)
EMX1
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : X1
!
Structure
Epitaxial planar type
NPN silicon transistor
(4)
0.65
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
0.7
0.9
(3)
UMX1N
0.2
0.5
0.5 0.5
1.0
1.6
2.0
(6)
(5)
1.25
2.1
0.15
!
Equivalent circuit
EMX1 / UMX1N
(3)
(2)
(1)
0.1Min.
0to0.1
Each lead has same dimensions
IMX1
(4)
(5)
(6)
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : X1
Tr
1
Tr
2
Tr
2
Tr
1
IMX1
(6)
0.3
(4)
(5)
(6)
(3)
(2)
(1)
(4)
(5)
1.6
2.8
0.3to0.6
0to0.1
The following characteristics apply to both Tr
1
and Tr
2.
0.15
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
EMX1, UMX1N
Power
dissipation IMX1
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
60
50
7
150
150 (TOTAL)
300 (TOTAL)
150
−55∼+150
˚C
˚C
Unit
V
V
V
mA
mW
Abbreviated symbol : X1
1
2
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
(3)
(2)
(1)
(1)
(2)
1/3